Code: A-25
Time: 3 Hours
Subject: PHYSICAL ELECTRONICS AND SOLID STATE DEVICES
Max. Marks: 100

NOTE: There are 11 Questions in all.

  • Question 1 is compulsory and carries 16 marks. Answer to Q. 1. must be written in the space provided for it in the answer book supplied and nowhere else.
  • Answer any THREE Questions each from Part I and Part II. Each of these questions carries 14 marks.
  • Any required data not explicitly given, may be suitably assumed and stated.
    _____________________________________________________________________
Q.1       Choose the correct or best alternative in the following: (2x8)

a. Junction capacitance is related with barrier potential as
 

(A)
(C) C = KV

(B)
(D)
b. The reverse saturation current I of Si diode varies as
 

(A) T2
(C)

(B) T3
(D)

c.

For quiet reception the front end of FM tuner contains

 

(A BJT
(C) UJT

(B) FET
(D)
SCR

d. .If the reverse bias in a FET is increased, its gm will
 

(A) increase.
(C) not be affected.

(B) decrease.
(D)
suddenly fall to zero.

e. The biggest advantage of the TRAPATT diode over the IMPATT diode is its
 

(A) lower noise.
(C) ability to operate at higher frequencies.

(B) higher efficiency.
(D) lesser sensitivity to harmonics.


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